2016金刚线切割与黑硅技术论坛

 2016金刚线切割与黑硅技术论坛

 

背景

 

硅片占据晶硅太阳电池成本结构的最大比重，降低硅片成本对于实现光伏平价上网至关重要。金刚线切割硅片是近年发展起来的新型技术，相比传统的砂浆切割工艺，具有单位产能硅耗少、切割效率高、辅材成本低和可切割薄硅片等优势。单晶硅太阳电池由于硅片端金刚线切片技术的普及，成本快速下降，市场份额有望从2015年的15%提升到2016年的25%以上。

 

在此背景下，多晶硅行业尽快引入金刚线切割工艺显得尤为紧迫。金刚线切割多晶硅片主要面临断线风险和制绒困难两大问题。金刚线制备与应用技术的优化可以有效降低金刚线切多晶硅时铸锭晶体硬点导致的断线风险。黑硅技术可以优化陷光效果，有效解决金刚线切割的多晶硅片反射率高，制绒困难的问题。

 

黑硅技术分为干法黑硅与湿法黑硅两种技术路线，是进一步提高多晶太阳电池效率的有效途径。金刚线切割多晶硅片和黑硅技术的普及将再次拉大多晶与单晶在硅片端的成本差距，增强多晶硅太阳电池路线的竞争力。而光伏市场对电池及组件成本降低和效率提升的持续要求，也将为金刚线切割和黑硅技术带来良好的市场机遇。

 

2016金刚线切割与黑硅技术论坛将于12月13日在江苏无锡召开。会议将探讨“十三五”光伏行业展望与太阳电池市场前景，金刚线切割技术进展与工艺优化，金刚线切割多晶硅片的挑战与解决方案，干法黑硅与湿法黑硅工艺路线比较，黑硅技术成本分析与效率提升趋势等。

 

主题

 

1.      “十三五”光伏行业展望与太阳电池市场前景

2.      金刚线切割多晶硅片的挑战与解决方案

3.      电镀金刚线与树脂金刚线成本控制与质量提升

4.      金刚线切割冷却液与硅粉回收利用技术

5.      砂浆切割设备改造为金刚线切割的可行性与应用案例

6.      干法黑硅与湿法黑硅工艺路线比较

7.      黑硅技术电池片CTM损失机理分析与解决思路

8.      服务于干法黑硅工艺的先进设备

9.      湿法黑硅工艺解决方案与环保分析

10.   黑硅技术成本降低与效率提升趋势

 

 

Diamond Wire Sawing and Black Silicon Technology Forum 2016

 

Silicon wafer accounts for the largest proportion of solar cell cost structure, reducing the cost of Si wafer is essential for solar energy to achieve grid parity. Compared with the traditional slurry sawing technology, diamond wire sawing (DWS) is a new wafer cutting technology in recent years; it has advantages of low Si consumption per unit capacity, high sawing efficiency, low auxiliary material cost and cutting thin silicon wafers, etc. Due to the popularity of DWS mono wafers, the cost of mono-Si solar cell has rapid declines, and the market share of mono-Si solar cell is expected increasing to 25% in 2016.

 

In this context, multi wafer is particularly urgent to introduce DWS as soon as possible. DWS multi wafer is mainly faced with two problems of broken lines and texturing difficulty. Diamond wire’s preparation and application optimization can effectively reduce the risk of broken lines caused by ingot crystal hard spot. Black silicon technology can optimize the light trapping effect; effectively solve high reflectivity and texturing difficulty of DWS multi wafers.

 

Black silicon technology includes dry method of reactive ion etching (RIE) and wet method of metal catalyzed chemical etching (MCCE), which can further improve the efficiency of multi-Si solar cells. The popularity of DWS multi wafer and black silicon will once again widen the cost gap of multi and mono wafers, enhance the competitiveness of multi-Si solar cells. And PV market’s continuous requirements for cost reduction and efficiency improvement of cells and modules will also bring good market opportunities for DWS and black silicon technology.

 

Diamond Wire Sawing and Black Silicon Technology Forum 2016 will be held on 13 December in Wuxi, Jiangsu, China. The upcoming conference will discuss national “13th FYP” PV industrial outlook & solar cell market prospects; DWS technology progress and process optimization; DWS multi wafers’ challenges and solutions; comparison of RIE and MCCE process; black silicon technology cost analysis and efficiency improvement trends, etc.

 

Topics:

 

1.      National “13th FYP” PV industrial outlook & solar cell market prospects

2.      DWS multi wafers’ challenges and solutions

3.      Plating and resin diamond wires’ cost control and quality improvement

4.      DWS coolants and silicon powder recycling technology

5.      Feasibility and application cases of slurry sawing equipment upgrading to DWS

6.      Comparison of RIE and MCCE process

7.      Black silicon solar cells CTM loss mechanism analysis and solutions

8.      Advanced equipment for RIE technology

9.      MCCE process solutions and environmental analysis

10.   Black silicon technology cost reduction and efficiency improvement trends